silicon doping

Influence of Silicon Doping on the Structure and the Magnetic Property of γ-Fe_2O_3 Particle

掺硅对γ-Fe2O3微粒的结构和磁性能的影响

Quality Control for Silicon Neutron Doping in SPRR-300

300~反应堆单晶硅掺杂质量控制

The influence factors of LAPS characteristics such as silicon doping content, insulating layer thickness and light intensity are analyzed by means of circuit simulation method. The simulation results correctly reflect the reality characteristics of LAPS.

在此基础上，采用电路模拟方法仿真分析了影响LAPS特性的因素：硅掺杂浓度、绝缘层厚度以及光强等，仿真结果正确地反映了LAPS的实际特性。

The oxygen parameter as well as the mean size of interstices of tetrahedral and octahedral also appears a certain influence of silicon doping.

掺入的Si~（4+）阳离子有很强的占据类尖晶石结构中四面体位的趋势，对氧参数及四面体位和八面体位的平均间隙大小也有一定影响。

The paper gives a detailed account of various kinds factors which affect on NTD silicon doping precision on the basis of a great amount of experiments and measurements. It also gives some quantitative and qualitative results.

本文在大量实验测量的基础上，对影响NTD硅掺杂精度的因素作了较为详细的研究，给出了一些定量和定性的结果。

The concentration control of silicon doping in VB-GaAs monocrystal growth process was discussed. The modification to the factor of doping silicon into GaAs bulk was proposed.

结合VB-GaAs晶体生长工艺，对工艺中掺Si浓度的控制进行了探讨，提出了掺杂计算的修正因子。

Factors Affecting on NTD Silicon Doping Precision

影响NTD硅掺杂精度的因素